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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors D44T3/4 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 300V (Min) *High Switching Speed *Low Saturation Voltage APPLICATIONS *Designed for general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage VBE=0 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 400 300 5 2 4 0.5 31.2 150 -55~150 UNIT V V V A A A W PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 4 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCE(sat) VBE(sat) ICES IEBO PARAMETER Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current D44T3 hFE-1 DC Current Gain D44T4 D44T3 hFE-2 DC Current Gain D44T4 fT Current-Gain--Bandwidth Product IC= 0.1A ; VCE= 10V; ftest= 1MHz IC= 50mA ; VCE= 10V 40 15 IC= 0.5A ; VCE= 10V 75 20 CONDITIONS IC= 0.5A; IB= 50mA IC= 0.5A; IB= 50mA VCE= 400V; VBE= 0 VEB= 5V; IC= 0 30 MIN D44T3/4 TYP. MAX 1.0 1.2 10 10 90 175 UNIT V V A A MHz tr tstg tf Rise Time Storage Time Fall Time IC= 0.5A; IB1= -IB2= 50mA 0.3 3.0 0.7 s s s isc Websitewww.iscsemi.cn 2 |
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